US 12,396,296 B2
Light-emitting device
Huining Wang, Fujian (CN); Hongwei Xia, Fujian (CN); Quanyang Ma, Fujian (CN); Shiwei Liu, Fujian (CN); Jiali Zhuo, Fujian (CN); Shuo Yang, Fujian (CN); Su-Hui Lin, Fujian (CN); and Chung-Ying Chang, Fujian (CN)
Assigned to Quanzhou Sanan Semiconductor Technology Co. , Ltd, Fujian (CN)
Filed by Quanzhou Sanan Semiconductor Technology Co., Ltd., Fujian (CN)
Filed on Nov. 22, 2022, as Appl. No. 17/992,717.
Claims priority of application No. 202210063980.4 (CN), filed on Jan. 20, 2022.
Prior Publication US 2023/0231075 A1, Jul. 20, 2023
Int. Cl. H01L 29/66 (2006.01); H10H 20/00 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/816 (2025.01) [H10H 20/8252 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting device, comprising:
an epitaxial structure that includes a first semiconductor layer, an active layer disposed on said first semiconductor layer, and a second semiconductor layer disposed on said active layer opposite to said first semiconductor layer;
a transparent current spreading unit that is disposed on said second semiconductor layer;
a first electrode that is disposed on said epitaxial structure and electrically connected to said first semiconductor layer; and
a second electrode that is disposed on said transparent current spreading unit;
wherein said transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer, said first transparent current spreading layer being disposed between and connected to said second electrode and said second transparent current spreading layer, said second transparent current spreading layer being connected to said second semiconductor layer, said first transparent current spreading layer being doped with aluminum and having a thickness that accounts for 0.5% to 33% of a thickness of said transparent current spreading unit, said second transparent current spreading layer having a thickness greater than that of said first transparent current spreading layer.