US 12,396,295 B2
Indium gallium nitride (InGaN) relaxed templates employed as a substrate for nitride-based devices and related methods
Salah M. Bedair, Raleigh, NC (US)
Assigned to NORTH CAROLINA STATE UNIVERSITY, Raleigh, NC (US)
Filed by North Carolina State University, Raleigh, NC (US)
Filed on Apr. 20, 2022, as Appl. No. 17/724,755.
Claims priority of provisional application 63/177,026, filed on Apr. 20, 2021.
Prior Publication US 2022/0336699 A1, Oct. 20, 2022
Int. Cl. H01L 29/06 (2006.01); H01L 31/00 (2006.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/815 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/815 (2025.01) [H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/8162 (2025.01); H10H 20/825 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A device structure, comprising:
a GaN layer; and
a semibulk (SB) template comprising a plurality of stacked periods on the GaN layer, each period comprising a layer of InGaN and a GaN interlayer disposed on the layer of InGaN, where a thickness of the GaN interlayer of a top period of the plurality of stacked periods is greater than a thickness of the GaN interlayer of a bottom period of the plurality of stacked periods, the bottom period disposed on the GaN layer, wherein the layer of InGaN comprises p-InGaN or n-InGaN.