US 12,396,294 B2
LED devices, LED structures and manufacturing methods thereof
Weihua Liu, Jiangsu (CN); and Kai Cheng, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 18/250,531
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Nov. 13, 2020, PCT No. PCT/CN2020/128629
§ 371(c)(1), (2) Date Apr. 25, 2023,
PCT Pub. No. WO2022/099599, PCT Pub. Date May 19, 2022.
Prior Publication US 2024/0014344 A1, Jan. 11, 2024
Int. Cl. H01L 33/06 (2010.01); H01L 33/00 (2010.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/01335 (2025.01); H10H 20/816 (2025.01); H10H 20/8252 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A manufacturing method of an LED structure, comprising:
growing a first-conductivity-type semiconductor layer on a substrate;
growing an active layer on the first-conductivity-type semiconductor layer, wherein the active layer includes a potential well layer, an insertion layer and a barrier layer that are stacked, the insertion layer includes at least one first insertion layer and at least one second insertion layer that are stacked, a quantum confinement Stark effect is produced between the first insertion layer and the potential well layer; materials of the potential well layer, the first insertion layer and the barrier layer are all III-V semiconductor materials, and a material of the second insertion layer includes Si—N bond to repair V-shaped defects in the first insertion layer; and
growing a second-conductivity-type semiconductor layer on the active layer, wherein the conductivity types of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer are opposite.