US 12,396,292 B2
Semiconductor device comprising first and second conductive layers
Shunpei Yamazaki, Tokyo (JP); Miyuki Hosoba, Kanagawa (JP); and Suzunosuke Hiraishi, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Jan. 16, 2024, as Appl. No. 18/413,153.
Application 18/413,153 is a continuation of application No. 17/978,269, filed on Nov. 1, 2022, granted, now 11,894,486.
Application 17/978,269 is a continuation of application No. 16/196,091, filed on Nov. 20, 2018, abandoned.
Application 16/196,091 is a continuation of application No. 15/685,005, filed on Aug. 24, 2017, granted, now 10,396,236, issued on Aug. 27, 2019.
Application 15/685,005 is a continuation of application No. 13/899,736, filed on May 22, 2013, granted, now 9,748,436, issued on Aug. 29, 2017.
Application 13/899,736 is a continuation of application No. 12/954,181, filed on Nov. 24, 2010, granted, now 8,471,256, issued on Jun. 25, 2013.
Claims priority of application No. 2009-270784 (JP), filed on Nov. 27, 2009.
Prior Publication US 2024/0154056 A1, May 9, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10H 20/00 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01)
CPC H10H 20/062 (2025.01) [H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01); G02F 1/1368 (2013.01); H01L 2924/0002 (2013.01); H10K 59/1213 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first electrode;
a first insulating layer over the first electrode;
an oxide semiconductor layer over the first insulating layer;
a second electrode over the oxide semiconductor layer, and electrically connected to the oxide semiconductor layer;
a third electrode over the oxide semiconductor layer, and electrically connected to the oxide semiconductor layer;
a second insulating layer over the second electrode and the third electrode;
an organic resin layer over the second insulating layer; and
a pixel electrode over the organic resin layer, and electrically connected to the third electrode,
wherein each of the second electrode and the third electrode includes a first conductive layer and a second conductive layer over and in contact with the first conductive layer,
wherein the first conductive layer includes at least one of titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum,
wherein the second conductive layer includes copper,
wherein an edge of a lower surface of the second conductive layer is in contact with the first conductive layer, and
wherein the second conductive layer is not in contact with the oxide semiconductor layer.