US 12,396,289 B2
Germanium-containing photodetector and methods of forming the same
Jyh-Ming Hung, Dacun Township (TW); Tzu-Jui Wang, Fengshan (TW); Kuan-Chieh Huang, Hsinchu (TW); and Jhy-Jyi Sze, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jun. 27, 2024, as Appl. No. 18/757,396.
Application 18/757,396 is a division of application No. 18/358,257, filed on Jul. 25, 2023, granted, now 12,051,763.
Application 18/358,257 is a division of application No. 17/227,432, filed on Apr. 12, 2021, granted, now 11,837,613, issued on Dec. 5, 2023.
Claims priority of provisional application 63/031,933, filed on May 29, 2020.
Prior Publication US 2024/0355953 A1, Oct. 24, 2024
Int. Cl. H10F 71/00 (2025.01); H01L 23/00 (2006.01); H10F 30/221 (2025.01); H10F 30/223 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 71/1212 (2025.01) [H01L 24/08 (2013.01); H10F 30/221 (2025.01); H10F 30/223 (2025.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/8033 (2025.01); H10F 39/809 (2025.01); H01L 2224/08145 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising a photodetector, wherein the photodetector comprises:
a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate; and
a silicon-containing capping structure located on a top surface of the germanium-containing well and including silicon atoms at an atomic percentage greater than 42%,
wherein:
the germanium-containing well comprises a photovoltaic junction; and
the silicon-containing capping structure comprises a first-conductivity-type silicon region.