US 12,396,288 B2
Film preparation method, solar cell, photovoltaic device, and photovoltaic system
Chengfa Liu, Changzhou (CN); Shuai Zhang, Changzhou (CN); Hong Chen, Changzhou (CN); Yugang Lu, Changzhou (CN); Wanli Li, Changzhou (CN); and Yang Zou, Changzhou (CN)
Assigned to TRINA SOLAR CO., LTD., Changzhou (CN)
Filed by TRINA SOLAR CO., LTD., Changzhou (CN)
Filed on Sep. 19, 2023, as Appl. No. 18/369,946.
Claims priority of application No. 202310388825.4 (CN), filed on Apr. 12, 2023.
Prior Publication US 2024/0347667 A1, Oct. 17, 2024
Int. Cl. H10F 71/00 (2025.01); H10F 77/30 (2025.01)
CPC H10F 71/00 (2025.01) [H10F 77/311 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A film preparation method, comprising:
forming a first passivation layer on a first surface of a substrate by using a first preparation technique; and
forming a second passivation layer on a surface of the first passivation layer away from the substrate by using a second preparation technique, a material of the second passivation layer includes aluminum oxide, and a material of the first passivation layer includes aluminum oxide;
wherein forming the first passivation layer on the first surface of the substrate by using the first preparation technique includes:
controlling a substrate to move to sequentially pass through a first jet region, a gas-discharge region, and a third jet region in a reaction chamber, wherein a first precursor is introduced to the first jet region, a second precursor is introduced to the third jet region, the gas-discharge region is configured to discharge gaseous substances in the gas-discharge region from the reaction chamber, and the second precursor is adapted to react with the first precursor to form the first passivation layer; and
repeating the above step until a thickness of the first passivation layer reaches a first thickness;
wherein the first thickness of the first passivation layer is smaller than a second thickness of the second passivation layer, the first thickness of the first passivation layer is 2 nm to 6 nm;
wherein the first preparation technique includes atomic layer deposition, a passivation layer forming speed of the first preparation technique is lower than that of the second preparation technique, and a passivation effect of the first passivation layer is greater than that of the second passivation layer.