US 12,396,285 B2
Integration of solar cell and image sensor
Feng-Chien Hsieh, Pingtung County (TW); Yun-Wei Cheng, Taipei (TW); Ping Kuan Chang, Hsinchu (TW); Kuo-Cheng Lee, Tainan (TW); and Cheng-Ming Wu, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 22, 2022, as Appl. No. 17/892,846.
Claims priority of provisional application 63/343,442, filed on May 18, 2022.
Prior Publication US 2023/0402482 A1, Dec. 14, 2023
Int. Cl. H10F 39/00 (2025.01); H01L 25/04 (2023.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01); H10F 77/00 (2025.01); H10F 77/30 (2025.01); H10F 77/42 (2025.01); H10F 77/90 (2025.01)
CPC H10F 39/811 (2025.01) [H01L 25/043 (2013.01); H10F 39/018 (2025.01); H10F 39/024 (2025.01); H10F 39/809 (2025.01); H10F 77/315 (2025.01); H10F 77/42 (2025.01); H10F 77/935 (2025.01); H10F 39/182 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/8067 (2025.01); H10F 71/00 (2025.01); H10F 77/90 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure, comprising:
a first substrate comprising a plurality of photodiodes;
an interconnect structure disposed on the first substrate;
a first bonding layer disposed on the interconnect structure;
a second bonding layer disposed on the first bonding layer;
a second substrate disposed on the second bonding layer; and
a transparent conductive oxide layer disposed on the second substrate.