US 12,396,282 B2
Image sensor
Minkwan Kim, Hwaseong-si (KR); Chang Kyu Lee, Hwaseong-si (KR); In Sung Joe, Seoul (KR); Junhong Kim, Suwon-si (KR); and Jinsun Pyo, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 1, 2022, as Appl. No. 17/856,140.
Claims priority of application No. 10-2021-0140408 (KR), filed on Oct. 20, 2021.
Prior Publication US 2023/0120066 A1, Apr. 20, 2023
Int. Cl. H01L 27/146 (2006.01); H10F 39/00 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01)] 18 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate;
a pixel isolation pattern in the substrate and defining unit pixel regions in the substrate;
color filters on the substrate and corresponding to the unit pixel regions, respectively;
a low-refractive index pattern between adjacent color filters of the color filters to at least partially isolate the adjacent color filters from direct contact with each other;
an insulating structure between the substrate and the color filters; and
a light blocking pattern vertically overlapping with the pixel isolation pattern,
wherein the light blocking pattern is within the insulating structure and is isolated from direct contact with the low-refractive index pattern,
wherein a lowermost surface of the low-refractive index pattern is in direct contact with an uppermost surface of the insulating structure.