| CPC H10F 39/80377 (2025.01) [H10D 30/63 (2025.01); H10D 62/122 (2025.01); H10D 62/292 (2025.01); H10D 84/907 (2025.01); H10F 39/12 (2025.01); H10F 39/199 (2025.01); H10K 39/32 (2023.02); H01L 2924/13086 (2013.01); Y10S 977/938 (2013.01)] | 12 Claims |
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1. A light detecting device, comprising:
a photoelectric conversion region in a substrate, wherein the photoelectric conversion region is configured to generate a charge;
a first transistor that includes:
a first semiconductor area that extends in a vertical direction with respect to the substrate;
a gate around the first semiconductor area;
a first insulating film between the gate and the first semiconductor area; and
a second insulating film between the gate and the photoelectric conversion region;
a second transistor electrically connected to the first transistor, wherein
the first transistor is configured to transfer the generated charge to the second transistor,
the second transistor includes a second semiconductor area, and
the second semiconductor area is at a same level as of at least a part of the first semiconductor area; and
a wiring layer configured to electrically connect the first transistor to the second transistor, wherein the wiring layer is on the substrate.
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