US 12,396,275 B2
Photo detection device
Ikuo Kurachi, Tokyo (JP); Hiroshi Takano, Tokyo (JP); and Yasumasa Kashima, Tokyo (JP)
Assigned to Optohub Co., Ltd, Nagano (JP)
Appl. No. 17/918,111
Filed by Optohub Co., Ltd, Nagano (JP)
PCT Filed Mar. 16, 2022, PCT No. PCT/JP2022/011878
§ 371(c)(1), (2) Date Oct. 10, 2022,
PCT Pub. No. WO2023/175762, PCT Pub. Date Sep. 21, 2023.
Prior Publication US 2024/0145519 A1, May 2, 2024
Int. Cl. H01L 31/18 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01)
CPC H10F 39/184 (2025.01) [H10F 39/014 (2025.01); H10F 71/139 (2025.01)] 2 Claims
OG exemplary drawing
 
1. A photo detection device detecting an incident light from an object, comprising:
(i) a P-type silicon (Si) substrate;
(ii) a P-type germanium (Ge) layer formed on a first surface serving as a front surface of the P-type silicon (Si) substrate; and
(iii) a P-type thin film silicon (Si) layer formed on the P-type germanium (Ge) layer,
(iv) wherein the P-type thin film silicon (Si) layer contains:
a first region in which multiple single photon avalanche diodes (SPADs) arranged in an array are formed, and
a second region in which a CMOS transistor circuit driving the SPADs is formed, and
the multiple single photon avalanche diodes (SPADs) formed in the first region are electrically separated from the CMOS transistor circuit formed in the second region by a Shallow Trench Isolation (STI) layer.