US 12,396,274 B2
Photoelectric conversion apparatus, photoelectric conversion system, and moving object
Junji Iwata, Tokyo (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on May 21, 2024, as Appl. No. 18/670,594.
Application 18/670,594 is a continuation of application No. 18/302,384, filed on Apr. 18, 2023, granted, now 12,021,108.
Application 18/302,384 is a continuation of application No. 16/983,869, filed on Aug. 3, 2020, granted, now 11,658,197, issued on May 23, 2023.
Claims priority of application No. 2019-146308 (JP), filed on Aug. 8, 2019.
Prior Publication US 2024/0379723 A1, Nov. 14, 2024
Int. Cl. H10F 39/18 (2025.01); H01L 25/04 (2023.01); H10F 30/225 (2025.01)
CPC H10F 39/18 (2025.01) [H10F 30/2255 (2025.01); H01L 25/043 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A photoelectric conversion apparatus comprising:
a first chip including a first semiconductor layer having an avalanche diode;
a second chip including a second semiconductor layer having a signal processing portion for processing a signal based on an output from the avalanche diode, and
a first electrode to which a first voltage is supplied from an outside of the first chip and the second chip,
wherein the first chip includes a first multilayer wiring layer,
wherein the second chip includes a second multilayer wiring layer,
wherein the first chip and the second chip overlap each other,
wherein the avalanche diode is applied with the first voltage and a second voltage and a potential difference between the first voltage and the second voltage exceeds a breakdown voltage that causes avalanche multiplication,
wherein the first voltage is a negative potential, and
wherein, in a plan view, there is no contact for electrically connecting the first electrode and the second semiconductor layer at a position overlapping the first electrode.