US 12,396,273 B2
Image sensor structure for reduced pixel pitch and methods thereof
Takayuki Goto, Foster City, CA (US)
Assigned to OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed by OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed on Aug. 12, 2022, as Appl. No. 17/886,945.
Prior Publication US 2024/0055463 A1, Feb. 15, 2024
Int. Cl. H10F 39/18 (2025.01); H10F 39/00 (2025.01)
CPC H10F 39/18 (2025.01) [H10F 39/014 (2025.01); H10F 39/802 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A pixel cell for an image sensor, the pixel cell comprising:
a first semiconductor substrate including a first side and a second side, wherein the first side is opposite the second side;
a photodiode disposed within the first semiconductor substrate between the first side and the second side; and
a transfer gate disposed proximate to the first side of first semiconductor substrate, wherein the transfer gate includes a planar region, wherein the first side of the first semiconductor substrate is disposed between the planar region and the photodiode, and wherein a lateral area of the photodiode is less than or equal to a lateral area of the planar region of the transfer gate.