US 12,396,266 B2
Electrostatic protection device including scr and manufacturing method thereof
Tao Hu, Hangzhou (CN)
Assigned to JOULWATT TECHNOLOGY CO., LTD., Hangzhou (CN)
Filed by Joulwatt Technology Co., Ltd., Hangzhou (CN)
Filed on Dec. 23, 2022, as Appl. No. 18/088,488.
Claims priority of application No. 202111620027.7 (CN), filed on Dec. 23, 2021.
Prior Publication US 2023/0207556 A1, Jun. 29, 2023
Int. Cl. H10D 89/60 (2025.01); H10D 18/00 (2025.01)
CPC H10D 89/713 (2025.01) [H10D 18/251 (2025.01)] 15 Claims
OG exemplary drawing
 
1. An electrostatic protection device including an SCR, comprising:
a substrate;
an N-type well region and a P-type well region in the substrate arranged in order in a lateral direction;
a first N+ doped region and a first P+ doped region in the N-type well region arranged in order with a distance therebetween, wherein both the first N+ doped region and the first P+ doped region are electrically coupled with an anode of the electrostatic protection device including the SCR;
a second N+ doped region and a second P+ doped region in the P-type well region arranged in order and with a distance therebetween, wherein both the second N+ doped region and the second P+ doped region are electrically coupled with a cathode of the electrostatic protection device including the SCR;
a third N+ doped region across the N-type well region and the P-type well region;
a third P+ doped region adjacent to the third N+ doped region,
wherein each of the third N+ doped region and the third P+ doped region has a doping concentration higher than those of the first N+ doped region, the first P+ doped region, the second N+ doped region and the second P+ doped region;
in a case that Zener breakdown occurs in the PN junction structure between the third N+ doped region and the third P+ doped region, an SCR is triggered to form a discharge current path.