US 12,396,262 B2
Semiconductor device
Shunpei Yamazaki, Tokyo (JP); Kiyoshi Kato, Kanagawa (JP); and Masayuki Sakakura, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed on Jul. 20, 2023, as Appl. No. 18/224,224.
Application 18/224,224 is a continuation of application No. 17/365,149, filed on Jul. 1, 2021, granted, now 11,710,744.
Application 17/365,149 is a continuation of application No. 16/927,513, filed on Jul. 13, 2020, granted, now 11,056,510, issued on Jul. 6, 2021.
Application 16/927,513 is a continuation of application No. 15/366,418, filed on Dec. 1, 2016, granted, now 10,714,502, issued on Jul. 14, 2020.
Claims priority of application No. 2015-235300 (JP), filed on Dec. 2, 2015.
Prior Publication US 2023/0369342 A1, Nov. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 86/60 (2025.01); H10B 12/00 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01)
CPC H10D 86/60 (2025.01) [H10B 12/30 (2023.02); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor over a substrate;
a second transistor over the first transistor, the second transistor having a channel formation region comprising an oxide semiconductor;
a first insulating layer over the second transistor; and
a capacitor over the first insulating layer, the capacitor comprising a first conductive layer in contact with a first region of the first insulating layer, a second insulating layer over and in contact with the first conductive layer and a second region of the first insulating layer, and a second conductive layer over and in contact with the second insulating layer,
wherein the second insulating layer has a first part being in contact with the first conductive layer and a second part being in contact with the second region of the first insulating layer, and
wherein a bottom surface of the first conductive layer is higher than a top surface of the second part of the second insulating layer.