US 12,396,251 B2
Semiconductor structures and methods of forming the same
Ni-Wan Fan, Miao-Li County (TW); Jung-Chan Yang, Taoyuan County (TW); Hsiang-Jen Tseng, Hsinchu (TW); Tommy Hu, Hsinchu (TT); Chi-Yu Lu, New Taipei (TW); and Wei-Ling Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jun. 2, 2023, as Appl. No. 18/328,014.
Application 18/328,014 is a continuation of application No. 17/224,220, filed on Apr. 7, 2021, granted, now 11,705,450.
Application 17/224,220 is a continuation of application No. 16/562,650, filed on Sep. 6, 2019, granted, now 10,985,160, issued on Apr. 20, 2021.
Application 16/562,650 is a continuation of application No. 15/353,817, filed on Nov. 17, 2016, granted, now 10,446,546, issued on Oct. 15, 2019.
Prior Publication US 2023/0317723 A1, Oct. 5, 2023
Int. Cl. H10D 84/83 (2025.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01)
CPC H10D 84/83 (2025.01) [H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 84/0149 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first conductive structure as a single piece in contact with a first source/drain region of a first transistor and a second source/drain region of a second transistor, wherein there is no via between the first conductive structure and the first or second source/drain region, the first and second source/drain regions are at a common height from a first surface of a substrate, the first source/drain region of the first transistor is an output of a first electrical component of a first cell, and the second source/drain region of the second transistor is an input of a second electrical component of a second cell;
forming the first source/drain region on a side of a gate; and
forming the second source/drain region on the side of the gate.