| CPC H10D 84/617 (2025.01) [H01L 21/26513 (2013.01); H10D 8/045 (2025.01); H10D 8/422 (2025.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01)] | 18 Claims |
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1. An RC IGBT, comprising:
an active region with an IGBT section and a diode section;
a semiconductor body having a first side and a second side;
a drift region formed in the semiconductor body;
a first load terminal at the first side and a second load terminal at the second side;
a plurality of control trenches and a plurality of source trenches arranged in parallel to each other along a first lateral direction and extending into the semiconductor body along a vertical direction, wherein the plurality of source trenches extends into both the IGBT section and the diode section, wherein each source trench includes a source trench electrode electrically connected to the first load terminal; and
a plurality of IGBT mesas and a plurality of diode mesas in the semiconductor body and laterally confined, along the first lateral direction, by respective two of the pluralities of trenches,
wherein each IGBT mesa comprises a source region of a first conductivity type electrically connected to the first load terminal, and a body region of a second conductivity type electrically connected to the first load terminal and isolating the source region from the drift region of the RC IGBT, wherein each control trench includes a control electrode configured to control a load current in an IGBT mesa arranged adjacent to the respective control trench,
wherein each diode mesa comprises a first anode region of the second conductivity type electrically connected to the first load terminal,
wherein in the semiconductor body and at the second side:
a diode emitter region of the first conductivity type forms a part of the diode section and exhibits a lateral extension in the first lateral direction amounting to at least 50% of the drift region thickness or to at least 50% of the semiconductor body thickness; and
an IGBT emitter region of the second conductivity type forms a part of the IGBT section and exhibits a lateral extension in the first lateral direction amounting to at least 70% of the drift region thickness or to at least 70% of the semiconductor body thickness,
wherein in the diode section, a second anode region of the second conductivity type is electrically connected to the first load terminal,
wherein the second anode region extends deeper along the vertical direction as compared to the trenches in the diode section, and overlaps with the diode emitter region for at least 5% of a horizontal area of the diode emitter region.
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17. A method of producing an RC IGBT, the method comprising:
providing a semiconductor body having a first side and a second side;
forming a drift region in the semiconductor body;
forming an active region with an IGBT section and a diode section;
forming a first load terminal at the first side and a second load terminal at the second side;
forming a plurality of control trenches and a plurality of source trenches arranged in parallel to each other along a first lateral direction and extending into the semiconductor body along a vertical direction, wherein the plurality of source trenches extends into both the IGBT section and the diode section, wherein each source trench includes a source trench electrode electrically connected to the first load terminal;
forming a plurality of IGBT mesas and a plurality of diode mesas in the semiconductor body and laterally confined, along the first lateral direction, by respective two of the pluralities of trenches, wherein each IGBT mesa comprises a source region of a first conductivity type electrically connected to the first load terminal and a body region of a second conductivity type electrically connected to the first load terminal and isolating the source region from the drift region of the RC IGBT, wherein each control trench includes a control electrode configured to control a load current in an IGBT mesa arranged adjacent to the respective control trench, wherein each diode mesa comprises a first anode region of the second conductivity type electrically connected to the first load terminal,
forming, in the semiconductor body and at the second side, both a diode emitter region of the first conductivity type that forms a part of the diode section and that exhibits a lateral extension in the first lateral direction amounting to at least 50% of the drift region thickness or to at least 50% of the semiconductor body thickness, and an IGBT emitter region of the second conductivity type that forms a part of the IGBT section and that exhibits a lateral extension in the first lateral direction amounting to at least 70% of the drift region thickness or to at least 70% of the semiconductor body thickness; and
forming, in the diode section, a second anode region of the second conductivity type electrically connected to the first load terminal,
wherein the second anode region extends deeper along the vertical direction as compared to the trenches in the diode section and overlaps with the diode emitter region for at least 5% of a horizontal area of the diode emitter region.
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