US 12,396,246 B2
Semiconductor integrated circuit including gate-all-around FETs with nanosheet channels and Fin-like FETs
Wen-Ting Lan, Hsinchu (TW); Kuan-Ting Pan, Hsinchu (TW); Shi Ning Ju, Hsinchu (TW); Kuo-Cheng Chiang, Hsinchu County (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Apr. 11, 2022, as Appl. No. 17/717,429.
Application 17/717,429 is a division of application No. 16/888,380, filed on May 29, 2020, granted, now 11,302,580.
Prior Publication US 2022/0238384 A1, Jul. 28, 2022
Int. Cl. H10D 84/03 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01)
CPC H10D 84/038 (2025.01) [H10D 30/6735 (2025.01); H10D 84/0158 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first region comprising a plurality of nanosheets vertically stacked above a substrate;
a second region comprising a fin protruding from the substrate, wherein the substrate, the fin, and the plurality of nanosheets have a same material composition, wherein a top surface of a topmost nanosheet of the plurality of nanosheets is vertically offset from a top surface of the fin;
a first gate structure wrapping around each of the nanosheets; and
a second gate structure disposed over the top surface and sidewalls of the fin,
wherein the top surface of the topmost nanosheet has a concave shape with a horned profile.