US 12,396,244 B2
Semiconductor structure
Chien-Hao Chen, Yilan County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 7, 2024, as Appl. No. 18/736,589.
Application 18/358,010 is a division of application No. 17/161,074, filed on Jan. 28, 2021, granted, now 11,756,834, issued on Sep. 12, 2023.
Application 18/736,589 is a continuation of application No. 18/358,010, filed on Jul. 24, 2023, granted, now 12,033,897.
Prior Publication US 2024/0321644 A1, Sep. 26, 2024
Int. Cl. H10D 84/01 (2025.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/014 (2025.01) [H10D 64/667 (2025.01); H10D 64/691 (2025.01); H10D 84/0144 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a first transistor comprising:
a first gate dielectric layer;
a first work function metal layer over the first gate dielectric layer; and
a tungsten-and-nitrogen-containing layer between the first work function metal layer and the first gate dielectric layer; and
a second transistor comprising:
a second gate dielectric layer; and
a second work function metal layer over the second gate dielectric layer,
wherein the first gate dielectric layer comprises aluminum (Al) with a first Al concentration, the second gate dielectric layer comprises Al with a second Al concentration, and the first Al concentration is less than the second Al concentration.