US 12,396,235 B2
Semiconductor device and method for forming the same
Mahaveer Sathaiya Dhanyakumar, Hsinchu (TW); Cheng-Ting Chung, Hsinchu (TW); Chien-Hong Chen, Hsinchu County (TW); Jin Cai, Hsinchu (TW); and Chung-Wei Wu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Apr. 19, 2022, as Appl. No. 17/724,434.
Prior Publication US 2023/0335617 A1, Oct. 19, 2023
Int. Cl. H10D 64/01 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 64/017 (2025.01) [H10D 30/031 (2025.01); H10D 30/6715 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/021 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a dielectric layer over a substrate;
forming a carbon nanotube (CNT) over the dielectric layer;
forming a dummy gate structure over the CNT;
forming gate spacers on opposite sidewalls of the dummy gate structure;
after forming the gate spacers, etching the CNT and the dielectric layer to shorten the CNT and the dielectric layer;
after etching the CNT and the dielectric layer, forming source/drain epitaxy structures on opposite sides of the dummy gate structure and in contact with opposite sidewalls of the CNT;
replacing the dummy gate structure with a metal gate structure; and
forming source/drain contacts over the source/drain epitaxy structures, respectively.