US 12,396,230 B2
SiC semiconductor device manufacturing method and SiC semiconductor device
Tsunenobu Kimoto, Kyoto (JP); Takuma Kobayashi, Kyoto (JP); and Keita Tachiki, Kyoto (JP)
Assigned to KYOTO UNIVERSITY, Kyoto (JP)
Appl. No. 18/007,985
Filed by KYOTO UNIVERSITY, Kyoto (JP)
PCT Filed May 27, 2021, PCT No. PCT/JP2021/020202
§ 371(c)(1), (2) Date Dec. 2, 2022,
PCT Pub. No. WO2021/246280, PCT Pub. Date Dec. 9, 2021.
Claims priority of application No. 2020-098244 (JP), filed on Jun. 5, 2020.
Prior Publication US 2023/0307503 A1, Sep. 28, 2023
Int. Cl. H10D 62/832 (2025.01); H10D 12/01 (2025.01)
CPC H10D 62/8325 (2025.01) [H10D 12/031 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A SiC semiconductor device manufacturing method comprising:
a step (A) of etching a surface of a SiC substrate with H2 gas at a temperature of 1200° C. or more;
a step (B) of forming a SiO2 film on the SiC substrate under a condition where the SiC substrate is not oxidized; and
a step (C) of thermally treating the SiC substrate formed with the SiO2 film in N2 gas atmosphere at a temperature of 350° C. or more.