US 12,396,223 B2
Semiconductor device and method of manufacturing the same
Hidenobu Kojima, Kanazawa Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Sep. 13, 2021, as Appl. No. 17/472,961.
Claims priority of application No. 2020-157831 (JP), filed on Sep. 18, 2020.
Prior Publication US 2022/0093733 A1, Mar. 24, 2022
Int. Cl. H10D 62/10 (2025.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01)
CPC H10D 62/117 (2025.01) [H01L 21/3043 (2013.01); H01L 21/3065 (2013.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a lower surface and a side surface and the substrate containing a semiconductor material; and
an electrode provided on the lower surface,
wherein the side surface has a first side surface portion, a second side surface portion provided on the first side surface portion, and a third side surface portion provided on the second side surface portion,
the third side surface portion protrudes in a plane parallel to the lower surface more than the second side surface portion,
the first side surface portion protrudes in a plane parallel to the lower surface more than the third side surface portion,
a metal portion is provided on the first side surface portion, and
the substrate is exposed on the second side surface portion.