US 12,396,218 B2
Thin film transistor, fabrication method thereof, and display apparatus comprising the same
Seunghyo Ko, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Aug. 26, 2022, as Appl. No. 17/896,981.
Claims priority of application No. 10-2021-0117836 (KR), filed on Sep. 3, 2021; and application No. 10-2021-0194778 (KR), filed on Dec. 31, 2021.
Prior Publication US 2023/0071215 A1, Mar. 9, 2023
Int. Cl. H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01)
CPC H10D 30/6757 (2025.01) [H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A thin film transistor comprising:
an inorganic insulating layer on a substrate; and
an active layer on the inorganic insulating layer,
wherein the active layer includes:
a channel portion;
a first connection portion which contacts a first side of the channel portion; and
a second connection portion which contacts a second side of the channel portion opposite the first side of the channel portion,
wherein the active layer includes an oxide semiconductor layer, and the active layer includes a carrier acceptor,
wherein the carrier acceptor includes Cu+ and Cu2+, and a concentration of the Cu2+ in the active layer is higher than a concentration of Cu+ in the active layer.