US 12,396,217 B2
Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication
Chelsey Dorow, Portland, OR (US); Kevin O'Brien, Portland, OR (US); Carl Naylor, Portland, OR (US); Uygar Avci, Portland, OR (US); Sudarat Lee, Hillsboro, OR (US); Ashish Verma Penumatcha, Beaverton, OR (US); Chia-Ching Lin, Portland, OR (US); Tanay Gosavi, Portland, OR (US); Shriram Shivaraman, Hillsboro, OR (US); and Kirby Maxey, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 23, 2020, as Appl. No. 17/133,056.
Prior Publication US 2022/0199838 A1, Jun. 23, 2022
Int. Cl. H10D 30/67 (2025.01); H01L 23/29 (2006.01); H10D 62/10 (2025.01); H10D 62/80 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 30/6757 (2025.01) [H01L 23/291 (2013.01); H10D 30/675 (2025.01); H10D 62/118 (2025.01); H10D 62/80 (2025.01); H10D 64/691 (2025.01); H10D 84/0172 (2025.01); H10D 84/038 (2025.01)] 13 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a first transistor of a first conductivity type, the first transistor comprising:
a first channel region comprising a transition metal and a chalcogen;
a first gate electrode coupled to the first channel region;
an encapsulation material in direct contact with the first channel region, wherein the encapsulation material comprises oxygen and a second metal, different than the transition metal;
a first gate insulator between the first gate electrode and the encapsulation material, wherein the first gate insulator is in direct contact with the encapsulation material; and
a first source contact and a first drain contact coupled to the first channel region, wherein the first gate electrode and the encapsulation material are between the first drain contact and the first source contact;
a second transistor of a complementary second conductivity type and laterally adjacent to the first transistor, the second transistor comprising:
a second channel region comprising the transition metal and the chalcogen, but not in direct contact with the encapsulation material;
a second gate electrode coupled to the second channel region;
a second gate insulator between the second gate electrode and the second channel region; and
a second source contact and a second drain contact coupled to the second channel region, wherein the second gate electrode is between the second drain contact and the second source contact.