US 12,396,216 B2
Oxide material and semiconductor device
Shunpei Yamazaki, Setagaya (JP); Motoki Nakashima, Atsugi (JP); and Tatsuya Honda, Nigata (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Aug. 2, 2024, as Appl. No. 18/792,782.
Application 18/792,782 is a continuation of application No. 18/212,773, filed on Jun. 22, 2023, granted, now 12,057,510.
Application 18/212,773 is a continuation of application No. 17/564,556, filed on Dec. 29, 2021, granted, now 11,688,810, issued on Jun. 27, 2023.
Application 17/564,556 is a continuation of application No. 16/849,113, filed on Apr. 15, 2020, granted, now 11,217,702, issued on Jan. 4, 2022.
Application 16/849,113 is a continuation of application No. 16/130,588, filed on Sep. 13, 2018, granted, now 11,049,977, issued on Jun. 29, 2021.
Application 16/130,588 is a continuation of application No. 15/178,949, filed on Jun. 10, 2016, granted, now 10,079,309, issued on Sep. 18, 2018.
Application 15/178,949 is a continuation of application No. 13/325,700, filed on Dec. 14, 2011, granted, now 9,368,633, issued on Jun. 14, 2016.
Claims priority of application No. 2010-282135 (JP), filed on Dec. 17, 2010; and application No. 2011-151859 (JP), filed on Jul. 8, 2011.
Prior Publication US 2024/0395942 A1, Nov. 28, 2024
Int. Cl. H10D 30/67 (2025.01); C01G 19/00 (2006.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01)
CPC H10D 30/6755 (2025.01) [C01G 19/006 (2013.01); H10D 30/6757 (2025.01); H10D 62/40 (2025.01); H10D 62/405 (2025.01); H10D 62/80 (2025.01); C01P 2002/72 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide semiconductor layer comprising a stack of a first film and a second film;
an insulating layer over the oxide semiconductor layer; and
a gate electrode over the insulating layer,
wherein the second film is positioned over the first film,
wherein one of the first film and the second film comprises an In—Sn—Ga—Zn—O-based oxide semiconductor film,
wherein each of the first film and the second film comprises a crystal,
wherein the second film comprises c-axis aligned crystals, and
wherein the c-axis aligned crystals in the second film have different a-axis directions and b-axis directions from each other.