| CPC H10D 30/6755 (2025.01) [H10B 12/00 (2023.02); H10D 30/6734 (2025.01); H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01); H10D 99/00 (2025.01)] | 12 Claims |
|
1. A semiconductor device comprising:
a first insulator comprising an excess-oxygen region;
a second insulator comprising a metal oxide, the second insulator being over and in contact with a first region and a third region of the first insulator;
a first oxide semiconductor over the second insulator and overlapping with the first region of the first insulator;
a first conductor in contact with the first oxide semiconductor;
a second conductor in contact with the first oxide semiconductor; and
a second oxide semiconductor comprising a first region being over and in contact with the first oxide semiconductor and a second region being over and in contact with a second region of the first insulator,
wherein the metal oxide contains an element having lower Gibbs energy of formation in an Ellingham diagram for oxide than a metal element contained in the first oxide semiconductor,
wherein the third region of the first insulator is positioned to cover the first region and the second region of the first insulator,
wherein the first region of the second oxide semiconductor is positioned between the first conductor and the second conductor, and
wherein the second oxide semiconductor does not overlap with the first conductor and the second conductor.
|