US 12,396,212 B2
Gate all-around device with through-stack nanosheet 2D channel
Tao Li, Slingerlands, NY (US); Ardasheir Rahman, Schenectady, NY (US); Tsung-Sheng Kang, Ballston Lake, NY (US); and Shogo Mochizuki, Mechanicville, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 8, 2021, as Appl. No. 17/545,574.
Prior Publication US 2023/0178623 A1, Jun. 8, 2023
Int. Cl. H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/6735 (2025.01) [H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a semiconductor channel material structure containing a plurality of semiconductor channel material nanosheets stacked one atop the other and at least one through-stack semiconductor channel material extending through at least one of the semiconductor channel material nanosheets of the plurality of semiconductor channel material nanosheets, wherein the at least one through-stack semiconductor channel material has an upper portion extending through a topmost semiconductor channel material nanosheet of the plurality of semiconductor channel material nanosheets, the upper portion of the at least one through-stack semiconductor channel material has a top and a sidewall, and wherein the top and the sidewall of the at least one through-stack semiconductor channel material are both pyramidal in shape.