US 12,396,211 B2
Thin film transistor, semiconductor device and method of fabricating thin film transistor
Neil Quinn Murray, Hsinchu (TW); Hung-Wei Li, Hsinchu (TW); Mauricio Manfrini, Hsinchu County (TW); and Sai-Hooi Yeong, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 23, 2023, as Appl. No. 18/518,573.
Application 18/518,573 is a continuation of application No. 17/389,345, filed on Jul. 30, 2021, granted, now 11,855,226.
Prior Publication US 2024/0097041 A1, Mar. 21, 2024
Int. Cl. H01L 29/786 (2006.01); H01L 21/8258 (2006.01); H01L 27/12 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 84/08 (2025.01); H10D 86/00 (2025.01)
CPC H10D 30/6713 (2025.01) [H10D 30/031 (2025.01); H10D 30/6755 (2025.01); H10D 64/021 (2025.01); H10D 84/08 (2025.01); H10D 86/00 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A thin film transistor comprising:
a gate metal;
a gate dielectric layer disposed on the gate metal;
a semiconductor layer disposed on the gate dielectric layer;
an interlayer dielectric disposed on the semiconductor layer and having a contact hole over the semiconductor layer;
a source/drain metal disposed in the contact hole;
a tube barrier disposed between the interlayer dielectric and the source/drain metal and being in contact with the semiconductor layer; and
a liner disposed between the tube barrier and the source/drain metal and being in contact with the semiconductor layer in the contact hole.