US 12,396,208 B2
Semiconductor device
Kentaro Ichinoseki, Higashimurayama Tokyo (JP); and Keiko Kawamura, Yokohama Kanagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Aug. 23, 2022, as Appl. No. 17/893,882.
Claims priority of application No. 2022-038212 (JP), filed on Mar. 11, 2022.
Prior Publication US 2023/0290875 A1, Sep. 14, 2023
Int. Cl. H10D 30/66 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/668 (2025.01) [H10D 64/117 (2025.01); H10D 64/513 (2025.01); H10D 64/519 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor part;
a first electrode provided on a back surface of the semiconductor part;
a second electrode provided on a front surface of the semiconductor part, the front surface of the semiconductor part being at a side of the semiconductor part that is opposite to the back surface of the semiconductor part;
a third electrode provided between the first electrode and the second electrode, the semiconductor part including a trench having an opening in the front surface of the semiconductor part, and the third electrode extending inside the trench in a first direction from the first electrode toward the second electrode;
a control electrode provided inside the trench at the opening of the trench, the control electrode including a first control portion and a second control portion arranged in a second direction parallel to the back surface of the semiconductor part, the third electrode having a front end portion on a side of the third electrode that is closest to the front surface of the semiconductor part, and the front end portion of the third electrode extending between the first control portion and the second control portion;
a first insulating film provided between the semiconductor part and the third electrode, the first insulating film electrically insulating the third electrode from the semiconductor part;
a second insulating film provided between the semiconductor part and the control electrode, the second insulating film electrically insulating the control electrode from the semiconductor part; and
a third insulating film covering the front end portion of the third electrode, the third insulating film electrically insulating the third electrode from the control electrode and from the second electrode,
the control electrode being provided between the first insulating film and the second electrode,
the first insulating film including an extending portion extending between the front end portion of the third electrode and the control electrode,
the third insulating film extending between the extending portion of the first insulating film and the front end portion of the third electrode, and
the third insulating film extending between the front end portion of the third electrode and the second electrode.