US 12,396,201 B2
HEMT and method of fabricating the same
Chi-Hsiao Chen, Chiayi (TW); Kai-Lin Lee, Kinmen County (TW); and Wei-Jen Chen, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jul. 13, 2023, as Appl. No. 18/221,409.
Application 18/221,409 is a division of application No. 17/335,049, filed on May 31, 2021, granted, now 12,289,900.
Claims priority of application No. 202110493062.0 (CN), filed on May 7, 2021.
Prior Publication US 2023/0361206 A1, Nov. 9, 2023
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 62/8503 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A high electron mobility transistor (HEMT), comprising:
a substrate;
a channel layer disposed on the substrate;
an active layer disposed on the channel layer, wherein the active layer is a P-type aluminum gallium nitride layer;
a P-type gallium nitride gate disposed on the active layer, wherein a concentration of P-type dopants within the P-type gallium nitride gate, within the active layer and within the channel layer decreases from the P-type gallium nitride gate toward the channel layer in a stepwise manner, and among an entirety of the P-type aluminum gallium nitride layer, a concentration of P-type dopants in the P-type aluminum gallium nitride layer which is closer to the channel layer is less than the concentration of P-type dopants in the P-type aluminum gallium nitride layer which is farther from the channel layer; and
a source electrode and a drain electrode disposed on the active layer.