US 12,396,198 B2
Semiconductor device
Atsushi Yamada, Hiratsuka (JP)
Assigned to Fujitsu Limited, Kawasaki (JP)
Filed by Fujitsu Limited, Kawasaki (JP)
Filed on Sep. 2, 2022, as Appl. No. 17/929,398.
Claims priority of application No. 2021-193857 (JP), filed on Nov. 30, 2021.
Prior Publication US 2023/0170409 A1, Jun. 1, 2023
Int. Cl. H10D 30/47 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 62/8503 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a channel layer;
a barrier layer disposed above the channel layer;
a protective layer disposed on the barrier layer; and
an insulating layer disposed on the protective layer, wherein
a composition of the barrier layer is represented by Inx1Alx2Ga1-x1-x2N, where 0.00<=x1<=0.20, and 0.10<=x2<=1.00,
a composition of the protective layer is represented by Iny1Aly2Ga1-y1-y2N, where 0.00<=y1<=0.20, and 0.10<=y2<=1.00, x2<y2, and
the protective layer is an amorphous layer.