US 12,396,188 B2
Schottky barrier diode
Jun Arima, Tokyo (JP); Minoru Fujita, Tokyo (JP); Katsumi Kawasaki, Tokyo (JP); and Jun Hirabayashi, Tokyo (JP)
Assigned to TDK Corporation, Tokyo (JP)
Appl. No. 17/784,880
Filed by TDK Corporation, Tokyo (JP)
PCT Filed Oct. 5, 2020, PCT No. PCT/JP2020/037723
§ 371(c)(1), (2) Date Jun. 13, 2022,
PCT Pub. No. WO2021/124650, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 2019-228556 (JP), filed on Dec. 18, 2019.
Prior Publication US 2023/0039171 A1, Feb. 9, 2023
Int. Cl. H10D 8/60 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01)
CPC H10D 8/605 (2025.01) [H10D 62/80 (2025.01); H10D 99/00 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A Schottky barrier diode comprising:
a semiconductor substrate made of gallium oxide;
a drift layer made of gallium oxide and formed on the semiconductor substrate;
an anode electrode brought into Schottky contact with the drift layer;
a cathode electrode brought into ohmic contact with the semiconductor substrate;
an insulating film covering an inner wall of a trench formed in the drift layer; and
a protective film covering the anode electrode,
wherein the trench is filled with a part of the protective film and a metal member such that a first sidewall of the trench, the insulating film, the part of the protective film, the metal member, the insulating film, and a second sidewall of the trench are sequentially arranged in this order without intervening elements.