US 12,396,187 B2
Diodes with schottky contact including localized surface regions
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US); and Fredrik Allerstam, Solna (SE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jul. 11, 2022, as Appl. No. 17/811,618.
Prior Publication US 2024/0014328 A1, Jan. 11, 2024
Int. Cl. H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 62/109 (2025.01); H10D 62/8325 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A diode comprising:
a substrate of a first conductivity type;
a semiconductor layer of the first conductivity type disposed on the substrate, the semiconductor layer including a drift region of the diode;
a shield region of a second conductivity type disposed in the semiconductor layer adjacent to the drift region;
a surface region of the first conductivity type disposed in a first portion of the drift region adjacent to the shield region, the surface region having a doping concentration that is greater than a doping concentration of a second portion of the drift region adjacent to the surface region, the second portion of the drift region excluding the surface region, the surface region being further disposed in ten percent to ninety percent of an area of an upper portion of the shield region; and
a Schottky material disposed on:
at least a portion of the shield region;
the surface region in the first portion of the drift region; and
the second portion of the drift region.