US 12,396,175 B2
Three-dimensional stackable ferroelectric random access memory devices and methods of forming
Meng-Han Lin, Hsinchu (TW); Bo-Feng Young, Taipei (TW); Han-Jong Chia, Hsinchu (TW); Sheng-Chen Wang, Hsinchu (TW); Feng-Cheng Yang, Zhudong Township (TW); Sai-Hooi Yeong, Zhubei (TW); and Yu-Ming Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 17, 2024, as Appl. No. 18/638,140.
Application 18/638,140 is a continuation of application No. 18/151,682, filed on Jan. 9, 2023, granted, now 11,991,886.
Application 18/151,682 is a continuation of application No. 17/018,139, filed on Sep. 11, 2020, granted, now 11,552,103, issued on Jan. 10, 2023.
Claims priority of provisional application 63/044,578, filed on Jun. 26, 2020.
Prior Publication US 2024/0268122 A1, Aug. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 51/20 (2023.01); G11C 7/18 (2006.01); G11C 11/14 (2006.01); H10B 51/10 (2023.01)
CPC H10B 51/20 (2023.02) [G11C 7/18 (2013.01); G11C 11/14 (2013.01); H10B 51/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming a ferroelectric random access memory (FeRAM) device, the method comprising:
forming a first layer stack over a substrate, wherein the first layer stack has a layer of a first dielectric material and a layer of an electrically conductive material formed over the layer of the first dielectric material;
forming a patterned dielectric layer over the first layer stack, wherein the patterned dielectric layer covers a first portion of the first layer stack and exposes a second portion of the first layer stack;
after forming the patterned dielectric layer, forming a trench that extends through the patterned dielectric layer and the first layer stack;
lining sidewalls and a bottom of the trench with a ferroelectric material;
forming a channel material in the trench over the ferroelectric material;
filling the trench by forming a second dielectric material over the channel material; and
forming a conductive line in the second dielectric material, wherein the conductive line extends through the patterned dielectric layer and the first layer stack.