| CPC H10B 41/27 (2023.02) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 21/76838 (2013.01); H01L 23/5386 (2013.01); H01L 24/14 (2013.01); H10B 43/27 (2023.02)] | 19 Claims |

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1. A microelectronic device, comprising:
blocks horizontally extending in parallel in a first direction and respectively comprising tiers each including conductive material and insulative material vertically neighboring the conductive material;
slot structures horizontally extending in parallel in the first direction and horizontally alternating with the blocks in a second direction orthogonal to the first direction;
pillar structures within horizontal areas of and vertically extending completely through the blocks; and
bridge structures vertically underlying the blocks and the slot structures, the bridge structures respectively extending in the second direction from one of the pillar structures within a horizontal area of one of the blocks to an additional one of the pillar structures within an additional horizontal area of an additional one of the blocks.
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