US 12,396,164 B2
Methods of forming microelectronic devices, and related microelectronic devices and electronic systems
Fatma Arzum Simsek-Ege, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 7, 2022, as Appl. No. 17/930,388.
Prior Publication US 2024/0081049 A1, Mar. 7, 2024
Int. Cl. H10B 12/00 (2023.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01)
CPC H10B 12/50 (2023.02) [G11C 11/4085 (2013.01); G11C 11/4091 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a control logic structure including sense amplifiers clustered around sense amplifier exit regions;
an upper memory array structure underlying the control logic structure and comprising memory cells coupled to some of the sense amplifiers of the control logic structure by way of routing extending through the sense amplifier exit regions; and
a lower memory array structure underlying the upper memory array structure and comprising additional memory cells coupled to some other of the sense amplifiers of the control logic structure by way of additional routing extending through the sense amplifier exit regions.