US 12,396,162 B2
Semiconductor device with programable feature
Yin-Fa Chen, New Taipei (TW); and Jui-Hsiu Jao, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on May 26, 2022, as Appl. No. 17/825,058.
Prior Publication US 2023/0389302 A1, Nov. 30, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/50 (2023.02) [H10B 12/0335 (2023.02); H10B 12/053 (2023.02); H10B 12/09 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate comprising a first island, a second island and an isolation structure disposed between the first island and the second island, wherein the first island has a first area, and the second island has a second area greater than the first area;
an access transistor disposed in or on the first island;
a storage capacitor disposed over the access transistor;
a storage node contact connecting the storage capacitor to the access transistor;
a conductive line disposed over the substrate; and
a conductive feature connecting the conductive line to the second island,
wherein a top surface of the conductive feature and a top surface of the storage node contact are disposed at a same horizontal level.