US 12,396,156 B2
Memory structure and manufacturing method thereof, and semiconductor structure
Yi Tang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Aug. 3, 2022, as Appl. No. 17/817,134.
Claims priority of application No. 202210545501.2 (CN), filed on May 19, 2022.
Prior Publication US 2023/0380140 A1, Nov. 23, 2023
Int. Cl. H10B 12/00 (2023.01); G11C 7/18 (2006.01); G11C 8/14 (2006.01); H10D 62/10 (2025.01)
CPC H10B 12/30 (2023.02) [G11C 7/18 (2013.01); G11C 8/14 (2013.01); H10B 12/488 (2023.02); H10D 62/106 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an epitaxial structure;
a grounding structure, wrapping one end of the epitaxial structure in a first direction;
a columnar capacitor structure, wrapping the other end of the epitaxial structure in the first direction;
a bit line structure, surrounding the epitaxial structure and located between the grounding structure and the columnar capacitor structure; and
a word line structure, surrounding the epitaxial structure and located between the bit line structure and the columnar capacitor structure;
wherein a part of the epitaxial structure covered by the word line structure comprises:
a first semiconductor pillar, extending in the first direction and provided with a cross section, intersecting with the first direction, being in a rounded shape; and
a first channel layer, surrounding the first semiconductor pillar and located between the word line structure and the first semiconductor pillar;
wherein the first channel layer comprises a first-type doped layer; and a part of the epitaxial structure covered by the bit line structure and a part of the epitaxial structure covered by the columnar capacitor structure each comprise:
a second semiconductor pillar, extending in the first direction and provided with a cross section, intersecting with the first direction, being in a rounded shape; and
a second-type doped layer, comprising a first part located between the second semiconductor pillar and the bit line structure, and a second part located between the second semiconductor pillar and the columnar capacitor structure;
wherein the first semiconductor pillar and the second semiconductor pillar are made of germanium-silicon; and
the first channel layer and the second-type doped layer are made of silicon.