US 12,396,151 B2
Method of manufacturing semiconductor device
Ying-Cheng Chuang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Nov. 1, 2022, as Appl. No. 17/978,320.
Prior Publication US 2024/0147690 A1, May 2, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/05 (2023.02) [H10B 12/488 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a metallization layer on the substrate;
forming a first sacrificial layer and a second sacrificial layer, each of which penetrates the metallization layer;
forming a first mask layer and a second mask layer, wherein the first mask layer covers the first sacrificial layer, and the second mask layer covers the second sacrificial layer;
forming a first width controlling element on a lateral surface of the first mask layer and a second width controlling element on a lateral surface of the second mask layer;
removing the first mask layer and the second mask layer; and
patterning the metallization layer to form a first word line between the first sacrificial layer and the second sacrificial layer, wherein a dimension of the first word line depends on a dimension of the first width controlling element.