| CPC H10B 12/05 (2023.02) [H10B 12/482 (2023.02); H10B 12/488 (2023.02)] | 19 Claims |
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1. A pattern formation method, comprising:
forming a first capping layer on a substrate;
forming a recess that penetrates the first capping layer and an upper portion of the substrate, such that a non-penetrated portion of the first capping layer becomes a first capping pattern;
forming a second capping pattern that covers an inner sidewall of the recess;
forming a stack structure in the recess, such that the stack structure includes first stack patterns and second stack patterns that are alternately stacked, and the second capping pattern is between the substrate and a lateral surface of the stack structure; and
after forming the stack structure, removing the first capping pattern, the second capping pattern, and a portion of the substrate to form a protrusion of the substrate below the stack structure and the second capping pattern.
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