US 12,395,159 B2
Leakage-free dummy cell for semiconductor devices
Yu-Jheng Ou-Yang, Hsinchu (TW); Chi-Lin Liu, New Taipei (TW); Shang-Chih Hsieh, Taoyuan (TW); Wei-Hsiang Ma, Taipei (TW); and Kai-Chi Huang, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 4, 2024, as Appl. No. 18/764,205.
Application 18/764,205 is a continuation of application No. 18/313,384, filed on May 8, 2023, granted, now 12,074,603.
Prior Publication US 2024/0380392 A1, Nov. 14, 2024
Int. Cl. H03K 3/037 (2006.01); H03K 3/3562 (2006.01)
CPC H03K 3/0372 (2013.01) [H03K 3/0375 (2013.01); H03K 3/35625 (2013.01)] 20 Claims
OG exemplary drawing
 
18. A semiconductor device, comprising
a scannable D flip-flop, comprising: a master latch and a slave latch; and
a balloon latch, coupled between an input terminal and an output terminal of the slave latch through an inverter, wherein the balloon latch comprises a data path and a feedback path,
wherein a first leakage-free dummy cell and a second leakage-free dummy cell are disposed in the data path and the feedback path, respectively.