US 12,395,152 B2
Compact hybrid acoustic wave filter structure
Je-Hsiung Lan, San Diego, CA (US); Jonghae Kim, San Diego, CA (US); Nosun Park, San Diego, CA (US); Jui-Yi Chiu, Taichung (TW); and Kai Liu, Phoenix, AZ (US)
Assigned to QUALCOMM INCORPORATED, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Jan. 27, 2023, as Appl. No. 18/160,917.
Prior Publication US 2024/0258995 A1, Aug. 1, 2024
Int. Cl. H03H 9/54 (2006.01); H03H 3/02 (2006.01); H03H 3/08 (2006.01); H03H 9/05 (2006.01); H03H 9/17 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H10D 1/68 (2025.01)
CPC H03H 9/542 (2013.01) [H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/0557 (2013.01); H03H 9/171 (2013.01); H03H 9/25 (2013.01); H03H 9/64 (2013.01); H10D 1/68 (2025.01)] 25 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a substrate;
a first metallization structure disposed above the substrate, the first metallization structure comprising a plurality of metal layers;
a plurality of pillar structures disposed above the first metallization structure and electrically coupled to the first metallization structure;
a second metallization structure disposed above the plurality of pillar structures and electrically coupled to the plurality of pillar structures; and
an acoustic unit (AU) disposed above the first metallization structure, below the second metallization structure, and adjacent to at least one of the pillar structures of the plurality of pillar structures, the AU comprising a surface acoustic wave (SAW) or bulk acoustic wave (BAW) acoustic resonator (AR) that is electrically coupled to a capacitor and an inductor,
wherein the capacitor comprises a metal-insulation-metal (MIM) capacitor that is comprised of a first portion of the first metallization structure,
wherein the inductor is comprised of a second portion of the first metallization structure, and
wherein the capacitor and the inductor comprise a high-Q resonator.