US 12,395,147 B2
Resonator device and method for manufacturing resonator device
Yusuke Matsuzawa, Chino (JP)
Assigned to SEIKO EPSON CORPORATION, (JP)
Filed by Seiko Epson Corporation, Tokyo (JP)
Filed on Jan. 25, 2022, as Appl. No. 17/583,489.
Claims priority of application No. 2021-010083 (JP), filed on Jan. 26, 2021.
Prior Publication US 2022/0239274 A1, Jul. 28, 2022
Int. Cl. H03H 9/05 (2006.01); H03H 3/02 (2006.01); H03H 9/10 (2006.01); H03H 9/19 (2006.01)
CPC H03H 9/0552 (2013.01) [H03H 3/02 (2013.01); H03H 9/1021 (2013.01); H03H 9/19 (2013.01); H03H 2003/022 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A resonator device, comprising:
a base; and
a resonator component disposed on the base, wherein
the base includes
a semiconductor substrate having a first surface and a second surface that are in a front-to-back relation with each other,
an integrated circuit including a wiring layer that is disposed at the second surface side and includes a connection pad and an insulating layer that is disposed between the second surface and the wiring layer,
a through electrode penetrating the semiconductor substrate and the insulating layer and coupled to the connection pad, and
an annular metal layer disposed so as to penetrate the insulating layer between the second surface and the wiring layer, and surrounding the through electrode in a plan view of the semiconductor substrate, and
the base is disposed between the second surface and the insulating layer and includes an etching stop layer made of SiN.