US 12,395,090 B2
D-mode GaN transistor synchronous rectifier and power converter having the synchronous rectifier
Wei-Hua Chieng, Hsinchu (TW); Yi Chang, Hsinchu (TW); Da-Jeng Yao, Hsinchu (TW); Li-Chuan Tang, Hsinchu (TW); Chih-Chiang Wu, Hsinchu (TW); Yueh-Tsung Shieh, Hsinchu (TW); and Ching-Yao Liu, Hsinchu (TW)
Assigned to ACBEL POLYTECH INC., New Taipei (TW); and NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed by ACBEL POLYTECH INC., New Taipei (TW); and National Tsing Hua University, Hsinchu (TW)
Filed on Mar. 10, 2023, as Appl. No. 18/120,226.
Prior Publication US 2024/0305210 A1, Sep. 12, 2024
Int. Cl. H02M 3/335 (2006.01); H02M 1/08 (2006.01)
CPC H02M 3/33592 (2013.01) [H02M 1/08 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A D-mode GaN transistor synchronous rectifier, comprising:
a power switching module, including a module gate, a module drain connected to an output connection end, and a module source connected to a positive winding connection end; and comprising:
a first switch and a second switch, connected in series between the module source and the module drain; wherein the second switch is a Depletion-mode Gallium-Nitride High Electron Mobility Transistor (D-mode GaN HEMT);
a clamp capacitor, connected between the module gate and a gate of the second switch;
a clamp diode, connected between the gate of the second switch and the module source; and
a first diode, connected between the module gate and a gate of the first switch;
a peak detection module, comprising a power providing diode and a power providing capacitor connected in series between the module drain of the power switching module and a negative winding connection end, wherein a connection node is between the power providing diode and the power providing capacitor; and
a gate driver module, having a drive control end, a reference end, a power providing end, a first driving end, and a second driving end; wherein the drive control end is connected to the negative winding connection end, the reference end is connected to the positive winding connection end, the power providing end is connected to the connection node of the power providing diode and the power providing capacitor, the first driving end is connected to the module gate through a first resistor, and the second driving end is connected to the module gate through a second resistor: when a voltage on the drive control end is higher than a voltage on the reference end, the reference end is conducted to the first driving end; when the voltage on the drive control end is lower than the voltage on the power providing end, the power providing end is conducted to the second driving end.