US 12,395,076 B2
Charge pump cell with improved latch-up immunity and charge pumps including the same, and related systems, methods and devices
Lei Zou, Langhus (NO); and Torbjoern Loevseth Finnoey, Trøndelag (NO)
Assigned to Microchip Technology Incorporated, Chandler, AZ (US)
Filed by Microchip Technology Incorporated, Chandler, AZ (US)
Filed on Jan. 9, 2023, as Appl. No. 18/152,032.
Application 18/152,032 is a division of application No. 17/318,596, filed on May 12, 2021, granted, now 11,552,559.
Claims priority of provisional application 63/026,435, filed on May 18, 2020.
Prior Publication US 2023/0231474 A1, Jul. 20, 2023
Int. Cl. H02M 3/07 (2006.01)
CPC H02M 3/07 (2013.01) 25 Claims
OG exemplary drawing
 
1. A device, comprising:
a first transistor;
an output node electrically coupled to a first terminal of the first transistor, wherein the output node is unconnected to ground;
a boost node coupled with a second terminal of the first transistor to boost a charge for transfer from the boost node to the output node via the first transistor;
a circuit arranged to apply a shield voltage to a bulk contact of the first transistor at least partially responsive to a relationship between a voltage at the first terminal of the first transistor and a voltage at the second terminal of the first transistor;
a further first transistor, wherein the ungrounded output node electrically coupled to a first terminal of the further first transistor;
a further boost node coupled with a second terminal of the further first transistor to boost a charge for transfer from the further boost node to the ungrounded output node via the further first transistor; and
a further circuit arranged to apply a shield voltage to a bulk contact of the further first transistor at least partially responsive to a relationship between a voltage at the first terminal of the further first transistor and a voltage at the second terminal of the further first transistor,
wherein the first transistor coupled to alternately turn ON or OFF at least partially responsive to a voltage at the further boost node,
wherein the further first transistor coupled to alternately turn ON or OFF at least partially responsive to a voltage at the boost node.