US 12,394,772 B2
Molded dies in semiconductor packages and methods of forming same
Jie Chen, New Taipei (TW); Hsien-Wei Chen, Hsinchu (TW); and Ming-Fa Chen, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 7, 2023, as Appl. No. 18/366,139.
Application 18/366,139 is a division of application No. 17/383,971, filed on Jul. 23, 2021.
Claims priority of provisional application 63/172,349, filed on Apr. 8, 2021.
Prior Publication US 2024/0021597 A1, Jan. 18, 2024
Int. Cl. H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/18 (2013.01) [H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/5385 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first redistribution structure over a substrate, wherein the substrate is free of any active devices, and wherein the first redistribution structure comprises:
a plurality of first metallization patterns in a plurality of first dielectric layers;
a bonding layer over the first plurality of metallization patterns; and
a plurality of bonding pads in the bonding layer, wherein the plurality of bonding pads is electrically connected to the first plurality of metallization patterns;
bonding a first die to the first redistribution structure, wherein bonding the first die comprises directly bonding a first insulating layer of the first die to the bonding layer and directly bonding first die connectors of the first die to the plurality of bonding pads;
bonding a second die to the first redistribution structure, wherein bonding the second die comprises directly bonding a second insulating layer of the second die to the bonding layer and directly bonding second die connectors of the second die to the plurality of bonding pads;
bonding a die stack to the first redistribution structure, wherein bonding the die stack comprises directly bonding a third insulating layer of the die stack to the bonding layer and directly bonding third die connectors of the die stack to the plurality of bonding pads;
encapsulating the first die and the second die in a molding compound;
forming a second redistribution structure on a surface of the substrate opposite to the first redistribution structure; and
after forming the second redistribution structure, directly bonding an integrated passive device (IPD) to a surface of the second redistribution structure that is opposite to the substrate using a solderless bonding process, wherein the first die and the die stack each overlap the IPD.