US 12,394,769 B2
Batch soldering of different elements in power module
Kirill Trunov, Warstein (DE); Waltraud Eisenbeil, Großostheim (DE); Frederick Groepper, Paderborn (DE); Joerg Schadewald, Warstein (DE); Arthur Unrau, Geseke (DE); and Ulrich Wilke, Soest (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Sep. 15, 2023, as Appl. No. 18/368,914.
Application 18/368,914 is a continuation of application No. 16/902,725, filed on Jun. 16, 2020, granted, now 11,798,924.
Prior Publication US 2024/0047439 A1, Feb. 8, 2024
Int. Cl. H01L 25/16 (2023.01); B23K 1/19 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/488 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/07 (2006.01); H05K 3/34 (2006.01); B23K 1/00 (2006.01); H05K 3/12 (2006.01)
CPC H01L 25/16 (2013.01) [H01L 21/4853 (2013.01); H01L 23/49811 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/32507 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83815 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a substrate comprising first and second metal regions;
a first passive device that comprises a metal joining surface and is arranged on the substrate with the metal joining surface of the first passive device facing first metal region;
a semiconductor die that comprises a metal joining surface and is arranged on the substrate with the metal joining surface of the semiconductor die facing the second metal region;
a first soldered joint between the metal joining surface of the first passive device and the first metal region; and
a second soldered joint between the metal joining surface of the semiconductor die and the second metal region,
wherein a minimum thickness of the first soldered joint is greater than a maximum thickness of the second soldered joint, and
wherein the substrate comprises a ceramic layer and a metal layer disposed on the ceramic layer, wherein the first and second metal regions are physically isolated portions of the metal layer, and wherein the first passive device is a mechanical connector that is physically isolated from the semiconductor die, wherein the mechanical connector is one of a pin or a rivet.