US 12,394,751 B2
Method of forming semiconductor structure
Xinsheng Wang, Wuhan (CN); Li Zhang, Wuhan (CN); Gaosheng Zhang, Wuhan (CN); Xianjin Wan, Wuhan (CN); Ziqun Hua, Wuhan (CN); Jiawen Wang, Wuhan (CN); Taotao Ding, Wuhan (CN); Hongbin Zhu, Wuhan (CN); Weihua Cheng, Wuhan (CN); and Shining Yang, Wuhan (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed on Sep. 29, 2021, as Appl. No. 17/488,325.
Application 17/488,325 is a division of application No. 16/378,568, filed on Apr. 9, 2019, abandoned.
Application 16/378,568 is a continuation of application No. PCT/CN2018/093690, filed on Jun. 29, 2018.
Prior Publication US 2022/0020725 A1, Jan. 20, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/83 (2013.01) [H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/27 (2013.01); H01L 24/33 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/29023 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/29686 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/335 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, comprising:
providing a first substrate;
forming a first bonding layer on a surface of the first substrate, wherein a material of the first bonding layer is a dielectric material containing an element carbon (C) and a methyl (CH3) bond;
providing a second substrate;
forming a second bonding layer on a surface of the second substrate, wherein a material of the second bonding layer is a dielectric material containing the element C and the CH3 bond;
oxidizing a surface layer of the first bonding layer and a surface layer of the second bonding layer via an oxidation treatment, wherein the CH3 bonds are oxidized to be hydroxyl (OH) bonds;
performing a plasma treatment to the surface layer of the first bonding layer and the surface layer of the second bonding layer; and
bonding the first bonding layer and the second bonding layer to each other correspondingly.