| CPC H01L 24/05 (2013.01) [H01L 21/481 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/49811 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/49861 (2013.01); H01L 23/49866 (2013.01); H01L 23/5389 (2013.01); H01L 24/07 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 21/568 (2013.01); H01L 23/49827 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/29386 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/18162 (2013.01)] | 20 Claims |

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1. A semiconductor device comprising:
a first cross-section comprising an encapsulant;
a second cross-section comprising the encapsulant, a through via, a seed layer, and a conductive material;
a third cross-section comprising a semiconductor die, a protective material, the seed layer, and the conductive material, wherein the protective material comprises polyimide;
a fourth cross-section comprising the semiconductor die, the encapsulant, the seed layer, and the conductive material; and
a fifth cross section comprising the semiconductor die and the encapsulant.
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