US 12,394,735 B2
Shifting contact pad for reducing stress
Chun-Jen Chen, Jhubei (TW); Wei-Chun Pai, Hsinchu (TW); Cheng Wei Ho, Taoyuan (TW); and Sheng-Huan Chiu, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2022, as Appl. No. 17/661,154.
Claims priority of provisional application 63/268,516, filed on Feb. 25, 2022.
Prior Publication US 2023/0275047 A1, Aug. 31, 2023
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/02 (2013.01) [H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 24/04 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 24/92 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06138 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/94 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first polymer layer over a plurality of metal pads;
patterning the first polymer layer to form a plurality of openings in the first polymer layer, wherein the plurality of metal pads are exposed through the plurality of openings;
forming a plurality of conductive vias in the plurality of openings, and a plurality of conductive pads over and contacting the plurality of conductive vias, wherein a conductive pad in the plurality of conductive pads is laterally shifted from a conductive via directly underlying, and in physical contact with, the conductive pad, wherein the forming the plurality of conductive vias and the plurality of conductive pads comprise:
depositing a metal seed layer extending into the plurality of openings;
forming a patterned mask layer over the metal seed layer; and
plating a conductive material into the patterned mask layer and over the metal seed layer; and
forming a second polymer layer covering and physically contacting the plurality of conductive pads.