US 12,394,732 B2
Semiconductor package and method
Jiun Yi Wu, Zhongli (TW); Chen-Hua Yu, Hsinchu (TW); and Chung-Shi Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 29, 2024, as Appl. No. 18/591,881.
Application 18/591,881 is a continuation of application No. 18/174,784, filed on Feb. 27, 2023, granted, now 11,955,442.
Application 18/174,784 is a continuation of application No. 16/931,992, filed on Jul. 17, 2020, granted, now 11,594,498, issued on Feb. 28, 2023.
Claims priority of provisional application 63/015,759, filed on Apr. 27, 2020.
Prior Publication US 2024/0203907 A1, Jun. 20, 2024
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/562 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/5381 (2013.01); H01L 23/5383 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2224/16227 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1427 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/19103 (2013.01); H01L 2924/3511 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a redistribution structure on a first side of a core substrate, the redistribution structure comprising a plurality of redistribution layers, each redistribution layer including a dielectric layer and a metallization layer;
embedding a first local interconnect component in a first redistribution layer of the plurality of redistribution layers, the first local interconnect component comprising a substrate, an interconnect structure on the substrate, and conductive connectors, the conductive connectors being bonded to the metallization layer of the first redistribution layer, the dielectric layer of the first redistribution layer encapsulating the first local interconnect component, the substrate of the first local interconnect component being a bulk substrate made of a semiconductor material;
coupling a first integrated circuit die to the redistribution structure, the redistribution structure being interposed between the core substrate and the first integrated circuit die; and
coupling a second integrated circuit die to the redistribution structure, the redistribution structure being interposed between the core substrate and the second integrated circuit die, the first local interconnect component electrically coupling the first integrated circuit die to the second integrated circuit die.